About a week ago, a viral post declared that on July 19, China had “killed the silicon wafer.”
The claim was explosive: a breakthrough in a new semiconductor material called indium selenide (InSe) had supposedly rendered the entire Western chip ecosystem — from Intel’s FABs to TSMC’s foundries and America’s sanctions — obsolete overnight.
China, the post argued, had not just won the chip war; it had “exited the battlefield” by mastering a new law of atomic physics.
Like many things on the internet, this narrative was a dramatic oversimplification. But it was pointing at a real and significant event. On July 18, researchers from Peking University and Renmin University of China published an article detailing a novel method for the mass production of high-quality InSe wafers.
While this achievement won’t kill silicon tomorrow, it represents a genuine strategic leap. It signals that while the West has been focused on blockading the current technological paradigm, China is aggressively working to invent the next one.
Assessing the accuracy of the viral claims versus the scientific reality reveals a more nuanced but equally profound story about the future of technology, geopolitics, and the very materials that will power our world.
Let’s unpack what this breakthrough means for China, the West, and the future of semiconductors. Then, we’ll close with my Product of the Week: the HyperX QuadCast 2 S microphone.
Inside China’s InSe Wafer Breakthrough
The core of the social media post gets one thing right: the central challenge in producing InSe has been a problem of atomic-level precision known as stoichiometry.
InSe is a two-dimensional (2D) material, meaning it can form stable layers just a few atoms thick. For it to function as a high-performance semiconductor, it requires a perfect one-to-one atomic ratio of indium and selenium. Any deviation creates defects that ruin its electronic properties. Unlike silicon, which is a robust, forgiving element that can be polished and doped into submission, InSe is unforgiving.
The achievement of the Chinese scientists was cracking this very problem. Their innovative method involves heating amorphous InSe film and solid indium in a sealed environment. The vaporized indium creates a liquid interface that allows high-quality, atomically perfect InSe crystals to form in a self-correcting process.
Crucially, they scaled this from microscopic lab flakes to 5-centimeter wafers and built functional transistor arrays, proving the material is “fabrication-grade.” This is a vital step in moving a material from the lab to the factory, a bottleneck that has stalled many promising post-silicon candidates.
Promise of a ‘Golden’ Semiconductor
The excitement around InSe is justified. As silicon-based chips shrink toward their physical limits, the industry is desperately searching for alternatives to continue the progress defined by Moore’s Law — the trend that Intel co-founder Gordon Moore identified in 1965, predicting transistor counts would double roughly every two years with minimal cost increases.
InSe, often referred to as a “golden” semiconductor, has long been a leading contender for several reasons.
First, its electron mobility — the speed at which electrons move through it — is exceptionally high, with some studies showing it can exceed 1,000 cm²/V·s, far superior to silicon. The material’s high electron mobility translates directly to faster switching speeds and more powerful processors.
One report suggests that transistors made with this material could triple the intrinsic switching speed of current 3nm silicon technology while improving energy efficiency by an order of magnitude.
Second, unlike the “wonder material” graphene, which has no natural bandgap and thus cannot be easily “switched off,” InSe is a true semiconductor with a tunable bandgap, making it suitable for digital logic.
Finally, its atomically thin nature allows for superior gate control, mitigating the “short-channel effects” that plague modern silicon transistors and cause power leakage.
Reality Check: Why Silicon Isn’t Dead Yet
Here, however, is where the viral post veers from science into science fiction. The claim that this breakthrough makes ASML, TSMC, and the entire Western supply chain irrelevant is fundamentally incorrect. Creating a perfect wafer is only the first, albeit critical, step. The magic of a modern chip lies in patterning trillions of transistors onto that wafer with nanometer precision.
This process depends on a mind-bogglingly complex and expensive ecosystem that China has yet to master domestically. It includes extreme ultraviolet (EUV) lithography machines — a particularly challenging gap — as well as advanced etching and deposition tools from companies such as Applied Materials and Lam Research. The new InSe growth method does nothing to reduce this reliance on a sanctioned, highly intricate infrastructure.
Furthermore, the global semiconductor industry is a multi-trillion-dollar behemoth built on a silicon-based infrastructure that has been optimized over the past 50 years. The 5cm InSe wafer is a stunning proof-of-concept, but it is a world away from the 300mm (12-inch) wafers that are the standard in modern fabs.
Transitioning the industry to new material will take decades and trillions of dollars, with significant challenges in yield, cost, and reliability. Silicon will remain the workhorse of the digital world for the foreseeable future.
Strategic Leap, not a Knockout Punch
The true significance of this breakthrough is not that it renders silicon obsolete, but that it provides China with a powerful, sanction-proof path to developing next-generation technology for key strategic sectors where performance is paramount, and cost is secondary:
- Military and Aerospace: This is the most immediate and critical area of impact. For applications like advanced radar, electronic warfare systems, and satellite communications, InSe-based chips could offer a decisive performance advantage. By developing a sovereign capability in a “beyond-silicon” material, China can build specialized, high-end military hardware that isn’t dependent on U.S. technology.
- AI, Cloud, and High-Performance Computing: The most significant commercial threat is to the dominance of companies like Nvidia. An InSe-native AI accelerator could offer superior performance per watt, a critical metric in the energy-hungry data centers that power the cloud and AI revolution. An InSe-native AI accelerator could enable Chinese firms to build powerful, efficient, and fully domestic AI supercomputers — a key national priority.
- Consumer Electronics and Medical Devices: In the longer term, InSe’s unique properties open up new product categories. Its superior flexibility makes it suitable for foldable displays and wearable electronics, and its sensitivity and low power consumption make it ideal for advanced medical sensors and Internet of Things (IoT) devices. InSe’s flexibility, sensitivity, and low power use create a market where China could leapfrog existing technologies and establish a new frontier of innovation.
- Impact on Existing Chip Companies: The incumbents aren’t obsolete, but they’re on notice. TSMC and Intel must accelerate R&D in 2D materials to avoid being outflanked. Equipment makers like ASML will still find a market, as future InSe fabs will need their lithography tools. The real losers are the sanctions, designed to trap China in the silicon paradigm, which it now has a credible path to sidestep.
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